Irfb4020pbf pdf

PD - 97195 IRFB4020PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI Key Parameters VDS RDS(ON) typ. IRFS4020PBF. IRFB3004PBF. ИК. Модели: IRFB4020PBF. Применение: Mosfet n-канал. IRFB4332PbF. Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. irf.com. 7. IRFB4332PbF. TO-220AB Package Outline (Dimensions are shown in millimeters (inches)). Offer IRFB4020PBF IOR from Kynix Semiconductor Hong Kong Limited.FETs - Single MOSFET N-CH 200V 18A TO-220AB. IRFB4020PBF - N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics. IRFB4620PBF* IRFB4020PBF. IRFB4229PBF. These parts are Trench MOSFETs and should be used in switching power supply applications. (*) New product. Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage. 3. IRFB4321PbF. 1000. Gate Charge Waveform. 7. IRFB4321PbF. TO-220AB Package Outline (Dimensions are shown in millimeters (inches)). IRFB4020PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 200V drain-source breakdown voltage, 18A (Tc) continuous drain current at 25°C ,4.9V @ 100?A gate-source threshold voltage. ?????? ???? PDF IRFB4020PBF ?????? ?????. ????? IRFB4020PBF. DatasheetPDF PDF ????? 1 ?????? ??????? ?? ???????: ?????? ????: ??? ?? ??????.